Three-dimensional spatiokinetic distributions of sputtered and scattered products of Ar+ and Cu+ impacts onto the Cu surface:: Molecular dynamics simulations

被引:19
作者
Abrams, CF [1 ]
Graves, DB [1 ]
机构
[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA
关键词
copper; ionized physical vapor deposition (IPVD); ion reflection; molecular dynamics; sputtering;
D O I
10.1109/27.799821
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Energy and angular distributions of reflections and sputtered atoms are essential inputs for feature profile evolution simulations. Molecular dynamics simulations are used to compute the three-dimensional energy and angular distributions for reflected and sputtered products when both Ar+ and Cu+ ions bombard a copper surface, We term these "spatiokinetic" distribution functions (SKDF's), We show by example that SKDF's for reflected Ar+ ions focus as the incident angle theta(i) (normal = 0 degrees) is increased from 60-75 degrees and broaden as the incident energy E-i is increased from 55-175 eV, We show that the SKDF's for glancing-angle reflected Cu+ ions focus when E-i is increased from 55-175 eV, We show that the SKDF's for copper atoms sputtered by 175 eV Ar+ are insensitive to theta(i). We report total sputter yields for Ar+ and Cu+ ions at 55 and 175 eV for incident angles between 0 degrees and 85 degrees, and sticking probabilities for Cu+ ions for these energies and angles, Comparison to representative experimental results [1] is given.
引用
收藏
页码:1426 / 1432
页数:7
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