Electrical detection of spin accumulation at a ferromagnet-semiconductor interface

被引：177

作者：

Lou, X ^{[1
]}

Adelmann, C

Furis, M

Crooker, SA

Palmstrom, CJ

Crowell, PA

机构：

[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

[3] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.96.176603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that the accumulation of spin-polarized electrons at a forward-biased Schottky tunnel barrier between Fe and n-GaAs can be detected electrically. The spin accumulation leads to an additional voltage drop across the barrier that is suppressed by a small transverse magnetic field, which depolarizes the spins in the semiconductor. The dependence of the electrical accumulation signal on magnetic field, bias current, and temperature is in good agreement with the predictions of a drift-diffusion model for spin-polarized transport.

引用

页数：4

共 25 条

[1] Spin injection and relaxation in ferromagnet-semiconductor heterostructures [J].

Adelmann, C ;

Lou, X ;

Strand, J ;

Palmstrom, CJ ;

Crowell, PA .

PHYSICAL REVIEW B, 2005, 71 (12)

[2] Spin accumulation and decay in magnetic Schottky barriers [J].

Bauer, GEW ;

Tserkovnyak, Y ;

Brataas, A ;

Ren, J ;

Xia, K ;

Zwierzycki, M ;

Kelly, PJ .

PHYSICAL REVIEW B, 2005, 72 (15)

[3]

Ciuti C, 2002, PHYS REV LETT, V89, DOI 10.1103/PhysRevLetL89.156601

[4] Imaging spin transport in lateral ferromagnet/semiconductor structures [J].

Crooker, SA ;

Furis, M ;

Lou, X ;

Adelmann, C ;

Smith, DL ;

Palmstrom, CJ ;

Crowell, PA .

SCIENCE, 2005, 309 (5744) :2191-2195

[5] Low-temperature spin relaxation in n-type GaAs -: art. no. 245204 [J].

Dzhioev, RI ;

Kavokin, KV ;

Korenev, VL ;

Lazarev, MV ;

Meltser, BY ;

Stepanova, MN ;

Zakharchenya, BP ;

Gammon, D ;

Katzer, DS .

PHYSICAL REVIEW B, 2002, 66 (24) :1-7

[6] Voltage control of nuclear spin in ferromagnetic Schottky diodes [J].

Epstein, RJ ;

Stephens, J ;

Hanson, M ;

Chye, Y ;

Gossard, AC ;

Petroff, PM ;

Awschalom, DD .

PHYSICAL REVIEW B, 2003, 68 (04) :413051-413054

[7] Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization -: art. no. 121202 [J].

Epstein, RJ ;

Malajovich, I ;

Kawakami, RK ;

Chye, Y ;

Hanson, M ;

Petroff, PM ;

Gossard, AC ;

Awschalom, DD .

PHYSICAL REVIEW B, 2002, 65 (12) :1212021-1212024

[8] Spin diffusion in semiconductors [J].

Flatté, ME ;

Byers, JM .

PHYSICAL REVIEW LETTERS, 2000, 84 (18) :4220-4223

[9] Detection of spin-polarized electrons injected into a two-dimensional electron gas [J].

Hammar, PR ;

Johnson, M .

PHYSICAL REVIEW LETTERS, 2002, 88 (06) :4

[10] Observation of spin injection at a ferromagnet-semiconductor interface [J].

Hammar, PR ;

Bennett, BR ;

Yang, MJ ;

Johnson, M .

PHYSICAL REVIEW LETTERS, 1999, 83 (01) :203-206

← 1 2 3 →