Spin accumulation and decay in magnetic Schottky barriers

被引：16

作者：

Bauer, GEW

Tserkovnyak, Y

Brataas, A

Ren, J

Xia, K

Zwierzycki, M

Kelly, PJ

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Harvard Univ, Lyman Lab Phys, Cambridge, MA 02138 USA

[3] Norwegian Univ Sci & Technol, Dept Phys, N-7491 Trondheim, Norway

[4] Chinese Acad Sci, Inst Phys, Beijing 10080, Peoples R China

[5] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[6] Univ Twente, MESA Res Inst, NL-7500 AE Enschede, Netherlands

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.72.155304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductivity mismatch is found to enhance the current-induced spin imbalance in the semiconductor. The GaAs\MnAs interface resistance is obtained from an analysis of the magnetic-field-dependent Kerr rotation experiments by Stephens and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows toward the theoretical values, reflecting increasingly efficient Schottky barrier screening.

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页数：5

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