P implantation doping of Ge: Diffusion, activation, and recrystallization

被引：83

作者：

Satta, A ^{[1
]}

Janssens, T ^{[1
]}

Clarysse, T ^{[1
]}

Simoen, E ^{[1
]}

Meuris, M ^{[1
]}

Benedetti, A ^{[1
]}

Hoflijk, I ^{[1
]}

De Jaeger, B ^{[1
]}

Demeurisse, C ^{[1
]}

Vandervorst, W ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 01期

关键词：

D O I：

10.1116/1.2162565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied doping profiles, activation levels, and defect annealing of P introduced in Ge by ion implantation at different doses and energy, and annealed under various conditions by rapid thermal annealing. Common to all implant energies, ion-implanted P in Ge exhibits a "box profile" at high implant doses, when a sufficiently high thermal budget is applied-similarly to the concentration-dependent diffusion of P introduced in Ge from a high-concentration solid source. Upon proper annealing conditions, the active P concentration is limited to (5-6) X 10(19) at./cm(3), implying a 50% activation level of the total retained atoms for high-dose implants and 100% for the low-dose implants. A low thermal budget is sufficient to fully regrow the amorphous layer formed by high-dose P implantations, without evidence of residual defects in the regrown germanium layer and at the end of range of the P implant. (c) 2006 American Vacuum Society.

引用

页码：494 / 498

页数：5

共 17 条

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