Activation and diffusion studies of ion-implanted p and n dopants in germanium

被引：253

作者：

Chui, CO ^{[1
]}

Gopalakrishnan, K ^{[1
]}

Griffin, PB ^{[1
]}

Plummer, JD ^{[1
]}

Saraswat, KC ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

D O I：

10.1063/1.1618382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated symmetrically high levels of electrical activation of both p- and n-type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of 600-850 degreesC in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREM(TM) simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants. (C) 2003 American Institute of Physics.

引用

页码：3275 / 3277

页数：3

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