LOW-TEMPERATURE ANNEALING OF AS-IMPLANTED GE

被引：9

作者：

HATTANGADY, SV ^{[1
]}

FOUNTAIN, GG ^{[1
]}

NICOLLIAN, EH ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.340464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 74

页数：7

共 24 条

[1] CHARACTERIZATION OF DAMAGE IN ION-IMPLANTED GE [J].

APPLETON, BR ;

HOLLAND, OW ;

NARAYAN, J ;

SCHOW, OE ;

WILLIAMS, JS ;

SHORT, KT ;

LAWSON, E .

APPLIED PHYSICS LETTERS, 1982, 41 (08) :711-712

[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[3] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[4]

Bjorkqvist K., 1970, Radiation Effects, V6, P141, DOI 10.1080/00337577008235057

[5]

BJORKQVIST K, 1968, APPL PHYS LETT, V13, P379, DOI 10.1063/1.1652479

[6] RAPID THERMAL ANNEALING OF SI IMPLANTED GAAS [J].

CHAN, YJ ;

LIN, MS .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (01) :31-36

[7] EFFECT OF SURFACE TREATMENTS ON SILICON HALL MEASUREMENTS [J].

COLMAN, D ;

KENDALL, DL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4662-&

[8] THEORY OF IMPURITY SCATTERING IN SEMICONDUCTORS [J].

CONWELL, E ;

WEISSKOPF, VF .

PHYSICAL REVIEW, 1950, 77 (03) :388-390

[9] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[10] CHEMICAL ETCHING OF GE FOR DIFFERENTIAL HALL MEASUREMENTS [J].

HATTANGADY, SV ;

NICOLLIAN, EH ;

MARKUNAS, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) :1581-1583

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