CHEMICAL ETCHING OF GE FOR DIFFERENTIAL HALL MEASUREMENTS

被引：3

作者：

HATTANGADY, SV ^{[1
]}

NICOLLIAN, EH ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 06期

关键词：

D O I：

10.1149/1.2100714

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1581 / 1583

页数：3

共 10 条

[1]

Alavi K. T., 1983, APPL PHYS LETT, V43, P505

[2] APPLICATIONS OF ELECTROCHEMICAL METHODS FOR SEMICONDUCTOR CHARACTERIZATION .1. HIGHLY REPRODUCIBLE CARRIER CONCENTRATION PROFILING OF VPE''HI-LO'' NORMAL-GAAS [J].

AMBRIDGE, T ;

STEVENSON, JL ;

REDSTALL, RM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :222-228

[3] ELECTRICAL BEHAVIOR OF GROUP-3 AND GROUP-V IMPLANTED DOPANTS IN SILICON [J].

BARON, R ;

SHIFRIN, GA ;

MARSH, OJ ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3702-&

[4] IMPROVED METHOD OF ANODIC-OXIDATION OF GAAS [J].

HASEGAWA, H ;

FORWARD, KE ;

HARTNAGEL, HL .

ELECTRONICS LETTERS, 1975, 11 (03) :53-54

[5] ION-IMPLANTATION DAMAGE AND ANNEALING IN GERMANIUM [J].

HOLLAND, OW ;

APPLETON, BR ;

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2295-2301

[6] PEROXIDE ETCHING OF GERMANIUM [J].

PRIMAK, W ;

KAMPWIRT.R ;

DAYAL, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (01) :88-&

[7]

Przyborski W., 1969, RADIAT EFF, V1, P33

[8] OXIDE-GROWTH ON ETCHED SILICON IN AIR AT ROOM-TEMPERATURE [J].

RAIDER, SI ;

FLITSCH, R ;

PALMER, MJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :413-418

[9] ON THE MECHANISM OF CHEMICALLY ETCHING GERMANIUM AND SILICON [J].

TURNER, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (10) :810-816

[10] THE GROWTH OF ANODIC OXIDE FILMS ON GERMANIUM [J].

ZWERDLING, S ;

SHEFF, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (04) :338-342

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