Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires

被引：26

作者：

Hsieh, Chin-Hua ^{[1
]}

Chang, Mu-Tung ^{[1
]}

Chien, Yu-Jen ^{[1
]}

Chou, Li-Jen ^{[1
]}

Chen, Lih-Juann ^{[1
]}

Chen, Chii-Dong ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Acad Sinica, Inst Phys, Taipei 115, Taiwan

来源：

NANO LETTERS | 2008年 / 8卷 / 10期

关键词：

D O I：

10.1021/nl8016658

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Coaxial metal-oxide-semiconductor (MOS) Au-Ga2O3-GaN heterostructure nanowires were successfully fabricated by an in situ two-step process. The Au-Ga2O3 core-shell nanowires were first synthesized by the reaction of Ga powder, a mediated Au thin layer, and a SiO2 substrate at 800 degrees C. Subsequently, these core-shell nanowires were nitridized in ambient ammonia to form a GaN coating layer at 600 degrees C. The GaN shell is a single crystal, an atomic flat interface between the oxide and semiconductor that ensures that the high quality of the MOS device is achieved. These novel 1D nitride-based MOS nanowires may have promise as building blocks to the future nitride-based vertical nanodevices.

引用

页码：3288 / 3292

页数：5

共 25 条

[21] Silica-assisted catalytic growth of oxide and nitride nanowires [J].

Tang, CC ;

Fan, SS ;

de la Chapelle, ML ;

Li, P .

CHEMICAL PHYSICS LETTERS, 2001, 333 (1-2) :12-15

[22] Simple and high-yield method for synthesizing single-crystal GaN nanowires [J].

Tang, CC ;

Fan, SS ;

Dang, HY ;

Li, P ;

Liu, YM .

APPLIED PHYSICS LETTERS, 2000, 77 (13) :1961-1963

[23] VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].

WAGNER, RS ;

ELLIS, WC .

APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&

[24] Piezoelectric field effect transistor and nanoforce sensor based on a single ZnO nanowire [J].

Wang, Xudong ;

Zhou, Jun ;

Song, Jinhui ;

Liu, Jin ;

Xu, Ningsheng ;

Wang, Zhong L. .

NANO LETTERS, 2006, 6 (12) :2768-2772

[25] Ion-implanted GaN junction field effect transistor [J].

Zolper, JC ;

Shul, RJ ;

Baca, AG ;

Wilson, RG ;

Pearton, SJ ;

Stall, RA .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2273-2275

← 1 2 3 →