Effect of temperature on ballistic transport in InSb quantum wells

被引：11

作者：

Goel, N

Chung, SJ

Santos, MB

Suzuki, K

Miyashita, S

Hirayama, Y

机构：

[1] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[2] Univ Oklahoma, Ctr Semiconductor Phys Nanostruct, Norman, OK 73019 USA

[3] NTT Basic Res Labs, Kanagawa 2430198, Japan

[4] JST, CREST, Kawaguchi, Saitama 3310012, Japan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期

关键词：

InSb; quantum well; ballistic transport; bend resistance;

D O I：

10.1016/j.physe.2003.11.116

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Ballistic transport is observed in 0.5 mum long four-terminal square structures fabricated from InSb quantum wells with AlxIn1-xSb barriers. Negative bend resistance is observed at temperatures between similar to1.5 and similar to200 K. The disappearance of negative bend resistance at higher temperatures is accompanied by evidence of parallel conducting paths. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：761 / 764

页数：4

共 8 条

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