Molecular-beam epitaxial growth and characterization of AlxIn1-xSb/InSb quantum well structures

被引：15

作者：

Liu, WK ^{[1
]}

Zhang, XM ^{[1
]}

Ma, WL ^{[1
]}

Winesett, J ^{[1
]}

Santos, MB ^{[1
]}

机构：

[1] UNIV OKLAHOMA,LAB ELECTR PROPERTIES MAT,NORMAN,OK 73019

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期

关键词：

D O I：

10.1116/1.588855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the realization of two-dimensional electron systems in InSb quantum wells. AlxIn1-xSb barriers were selectively delta-doped with Si to produce electron densities between 0.9 x 10(11) and 4 x 10(11) cm(-2) with electron mobilities as high as 97 000 cm(2)/V s at 4.2 K. A decrease in the electron density and an increase in the electron mobility are observed when the distance between the quantum well and the dopants is increased. (C) 1996 American Vacuum Society.

引用

页码：2339 / 2342

页数：4

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