Fabrication of InP/InAs/InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy

被引：172

作者：

Mohan, P ^{[1
]}

Motohisa, J ^{[1
]}

Fukui, T ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2189203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of InP/InAs/InP core-multishell nanowire arrays by selective area metalorganic vapor phase epitaxy. The core-multishell nanowires were designed to accommodate a strained InAs quantum well layer in a higher band gap InP nanowire. The precise control over nanowire growth direction and heterojunction formation enabled the successful fabrication of the nanostructure in which all three layers were epitaxially grown without the assistance of any catalyst. The grown nanowires were highly uniform, vertically oriented, and periodically aligned with controllable dimensions. 4 K photoluminescence measurements confirmed the formation of strained InAs quantum well on InP (110) sidewalls and the well widths corresponding to the photoluminescence peaks were in good agreement with calculated values. (c) 2006 American Institute of Physics.

引用

页数：3

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