Two-dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum wells

被引：47

作者：

Capotondi, F

Biasiol, G

Vobornik, I

Sorba, L

Giazotto, F

Cavallini, A

Fraboni, B

机构：

[1] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[2] INFM, NEST, I-56126 Pisa, Italy

[3] Scuola Normale Super Pisa, I-56126 Pisa, Italy

[4] Univ Bologna, INFM, I-40127 Bologna, Italy

[5] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 02期

关键词：

D O I：

10.1116/1.1688345

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the achievement of a two-dimensional electron gas in completely undoped In0.75Al0.25As/In0.75Ga0.25As metamorphic quantum wells. Using these structures we were able to reduce the carrier density, with respect to reported values in similar modulation-doped structures, to about 2 - 3 x 10(11) cm(-2) with mobilities of up to 2.15 x 10(5) cm(2) (V s)(-1). We found experimentally that the electronic charge in the quantum well is likely due to a deep-level donor state in the In0.75Al0.25As barrier band gap, whose energy lies within the In0.75Ga0.25As/In0.75Al0.25As conduction band discontinuity. This result is further confirmed through a Poisson-Schrodinger simulation of the two-dimensional electron gas structure. (C) 2004 American Vacuum Society.

引用

收藏

页码：702 / 706

页数：5

相关论文

共 19 条

[1]

Blood P., 1992, The Electrical Characterization of Semiconductors. Majority Carriers and Electron States

[2] Continuously graded buffers for InGaAs/GaAs structures grown on GaAs [J].

Bosacchi, A ;

DeRiccardis, AC ;

Frigeri, P ;

Franchi, S ;

Ferrari, C ;

Gennari, S ;

Lazzarini, L ;

Nasi, L ;

Salviati, G ;

Drigo, AV ;

Romanato, F .

JOURNAL OF CRYSTAL GROWTH, 1997, 175 :1009-1015

[3] Very high electron mobilities at low temperatures in InxGa1-xAs/InyAl1-yAs HEMTs grown lattice-mismatched on GaAs substrates [J].

Gozu, S ;

Tsuboki, K ;

Hayashi, M ;

Hong, CL ;

Yamada, S .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :749-752

[4] Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers [J].

Grundler, D .

PHYSICAL REVIEW LETTERS, 2000, 84 (26) :6074-6077

[5] Direct determination of the Andreev reflection probability by means of point contact spectroscopy [J].

Jakob, M ;

Stahl, H ;

Knoch, J ;

Appenzeller, J ;

Lengeler, B ;

Hardtdegen, H ;

Lüth, H .

APPLIED PHYSICS LETTERS, 2000, 76 (09) :1152-1154

[6] SUPPRESSION OF THE LANDAU-LEVEL COINCIDENCE - A PHASE-TRANSITION IN TILTED MAGNETIC-FIELDS [J].

KOCH, S ;

HAUG, RJ ;

VONKLITZING, K ;

RAZEGHI, M .

PHYSICAL REVIEW B, 1993, 47 (07) :4048-4051

[7] Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers [J].

Lavoie, C ;

Pinnington, T ;

Nodwell, E ;

Tiedje, T ;

Goldman, RS ;

Kavanagh, KL ;

Hutter, JL .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3744-3746

[8] Highly anisotropic electron transport in shallow InGaAs heterostructures -: art. no. 045309 [J].

Löhr, S ;

Mendach, S ;

Vonau, T ;

Heyn, C ;

Hansen, W .

PHYSICAL REVIEW B, 2003, 67 (04)

[9] THE EFFECT OF GROWTH TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF ALINAS/INP GROWN BY MOLECULAR-BEAM EPITAXY AND METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

LUO, JK ;

THOMAS, H ;

CLARK, SA ;

WILLIAMS, RH .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6726-6733

[10] CHARACTERIZATION OF DEEP LEVELS IN SI-DOPED INXAL1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MALININ, A ;

TOMOZAWA, H ;

HASHIZUME, T ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1138-1142