Highly anisotropic electron transport in shallow InGaAs heterostructures -: art. no. 045309

被引：27

作者：

Löhr, S ^{[1
]}

Mendach, S ^{[1
]}

Vonau, T ^{[1
]}

Heyn, C ^{[1
]}

Hansen, W ^{[1
]}

机构：

[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.67.045309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe strikingly different magnetoconductivities in the two orthogonal [110] directions in strain relaxed In0.75Ga0.25As/In0.75Al0.25As heterostructures on GaAs with an additional strained InAs channel. Up to 19% higher mobilities are found in the [-110] direction compared with the [110] direction. In addition, the [110] direction shows a pronounced positive parabolic magnetoresistance, which is not observed in [-110]. The degree of this anisotropic transport is found to decrease for an increase in electron density as well as for an increasing distance between the two-dimensional electron gas and the heterostructure surface. The positive magnetoresistance in [110] can be explained by the semiclassical theory on modulated two-dimensional electron gases. We tentatively attribute the potential modulation to anisotropic spatial variations in residual strain, which are correlated with the cross hatch morphology of the sample surface.

引用

页数：4

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