CHARACTERIZATION OF DEEP LEVELS IN SI-DOPED INXAL1-XAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

MALININ, A ^{[1
]}

TOMOZAWA, H ^{[1
]}

HASHIZUME, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

INALAS; MBE; DLTS; PL; DX CENTER;

D O I：

10.1143/JJAP.34.1138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep levels in Si-doped InxAl1-xAs layers grown by molecular beam epitaxy were systematically investigated, changing the alloy composition for the first time. Deep level traps were characterized by deep level transient spectroscopy (DLTS) measurements and photoluminescence (PL) measurements. Two kinds of deep electron traps, E1 and E2 were observed. Least squares fitting curves of all data on the E1 and E2 traps were almost parallel to the Gamma-band edge. From the observed dependence of trap level position on the alloy composition as well as from the comparison between DLTS and PL results, observed traps seem to be not DX center like donors but normal deep donors associated with the Gamma-band.

引用

页码：1138 / 1142

页数：5

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