C60 thin-film transistors with high field-effect mobility, fabricated by molecular beam deposition

被引：32

作者：

Kobayashi, S. ^{[1
,3
]}

Takenobu, T. ^{[1
,3
]}

Mori, S. ^{[1
,3
]}

Fujiwara, A. ^{[2
,3
]}

Iwasa, Y. ^{[1
,3
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Adv Inst Sci & Technol, Kanazawa, Ishikawa 9231292, Japan

[3] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS | 2003年 / 4卷 / 04期

关键词：

C-60; Thin-film; Field-effect transistor; Mobility;

D O I：

10.1016/S1468-6996(03)00064-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report performance of C-60 thin-film field-effect transistors and characterizations of C-60 thin-films on SiO2 substrates fabricated by molecular beam deposition. Devices, fabricated and characterized under high vacuum without exposing to air, routinely showed current on/off ratios >10(8) and field-effect mobility in the range of 0.5-0.3 cm(2)/V s. The obtained mobility is comparable to the highest value among n-type organic thin-film transistors and close to that derived from the photocurrent measurements on C-60 thin-films. The grain size of C-60 thin-film, condensed in an fcc solid, increases with the substrate temperature, while the mobility did not exhibit a clear relation with substrate temperature. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：371 / 375

页数：5

共 12 条

[1] New air-stable n-channel organic thin film transistors [J].

Bao, ZA ;

Lovinger, AJ ;

Brown, J .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (01) :207-208

[2] Molecular beam deposited thin films of pentacene for organic field effect transistor applications [J].

Dimitrakopoulos, CD ;

Brown, AR ;

Pomp, A .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2501-2508

[3] MOBILITY OF CHARGE-CARRIERS IN VAPOR-PHASE GROWN C-60 SINGLE-CRYSTAL [J].

FRANKEVICH, E ;

MARUYAMA, Y ;

OGATA, H .

CHEMICAL PHYSICS LETTERS, 1993, 214 (01) :39-44

[4] Design of flat-panel displays based on organic light-emitting devices [J].

Gu, G ;

Forrest, SR .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (01) :83-99

[5] C-70 thin film transistors [J].

Haddon, RC .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1996, 118 (12) :3041-3042

[6] Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors [J].

Horiuchi, K ;

Nakada, K ;

Uchino, S ;

Hashii, S ;

Hashimoto, A ;

Aoki, N ;

Ochiai, Y ;

Shimizu, M .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1911-1912

[7] Naphthalenetetracarboxylic diimide-based n-channel transistor semiconductors: Structural variation and thiol-enhanced gold contacts [J].

Katz, HE ;

Johnson, J ;

Lovinger, AJ ;

Li, WJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (32) :7787-7792

[8] Fabrication and characterization of C60 thin-film transistors with high field-effect mobility [J].

Kobayashi, S ;

Takenobu, T ;

Mori, S ;

Fujiwara, A ;

Iwasa, Y .

APPLIED PHYSICS LETTERS, 2003, 82 (25) :4581-4583

[9] Stacked pentacene layer organic thin-film transistors with improved characteristics [J].

Lin, YY ;

Gundlach, DJ ;

Nelson, SF ;

Jackson, TN .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) :606-608

[10] N-type organic thin-film transistor with high field-effect mobility based on a N,N′-dialkyl-3,4,9,10-perylene tetracarboxylic diimide derivative [J].

Malenfant, PRL ;

Dimitrakopoulos, CD ;

Gelorme, JD ;

Kosbar, LL ;

Graham, TO ;

Curioni, A ;

Andreoni, W .

APPLIED PHYSICS LETTERS, 2002, 80 (14) :2517-2519

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