CdZnTe and CdTe materials for X-ray and gamma ray radiation detector applications

被引:388
作者
Szeles, C [1 ]
机构
[1] EV Prod, Saxonburg, PA 16056 USA
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2004年 / 241卷 / 03期
关键词
D O I
10.1002/pssb.200304296
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Good detection efficiency and high energy-resolution make Cadmium Zinc Telluride (CdZnTe) and Cadmium Telluride (CdTe) detectors attractive in many room temperature X-ray and gamma-ray detection applications such as medical and industrial imaging, industrial gauging and non-destructive testing, security and monitoring, nuclear safeguards and non-proliferation, and astrophysics. Advancement of the crystal growth and device fabrication technologies and the reduction of bulk, interface and surface defects in the devices are crucial for the widespread practical deployment of Cd1-xZnxTe-based detector technology. Here we review the effects of bulk, interface and surface defects on charge transport, charge transport uniformity and device performance and the progress in the crystal growth and device fabrication technologies aiming at reducing the concentration of harmful defects and improving Cd1-xZnxTe detector performance. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:783 / 790
页数:8
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