High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers

被引：42

作者：

Garnache, A

Kachanov, AA

Stoeckel, F

Planel, R

机构：

[1] Spectrometrie Phys Lab, F-38402 St Martin Dheres, France

[2] Microstruct & Microelect Lab, F-92195 Bagneux, France

来源：

OPTICS LETTERS | 1999年 / 24卷 / 12期

关键词：

D O I：

10.1364/OL.24.000826

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the demonstration of high-sensitivity intracavity laser absorption spectroscopy with multiple-quantum-well vertical-external-cavity surface-emitting semiconductor lasers (VECSEL's). A detection limit of 3 x 10(-10) cm(-1) has been achieved. The spectrotemporal dynamics of a VECSEL in the 1030-Mm wavelength region has been studied. The laser was operating cw at room temperature, with a baseline signal-to-noise ratio as high as 400. The laser was optically pumped with a threshold as low as 80 mW and was broadly tunable over a spectral range of similar to 75 nm. (C) 1999 Optical Society of America.

引用

收藏

页码：826 / 828

页数：3

相关论文

共 16 条

[1] PARASITIC SELECTION IN INTRA-CAVITY LASER DETECTION SPECTROSCOPY [J].

ANTONOV, EN ;

ANTSYFEROV, PS ;

KACHANOV, AA ;

KOLOSHNIKOV, VG .

OPTICS COMMUNICATIONS, 1982, 41 (02) :131-134

[2] DEPENDENCE OF THE SENSITIVITY OF INTRACAVITY LASER SPECTROSCOPY ON GENERATION PARAMETERS [J].

ANTONOV, EN ;

KACHANOV, AA ;

MIRONENKO, VR ;

PLAKHOTNIK, TV .

OPTICS COMMUNICATIONS, 1983, 46 (02) :126-130

[3]

BAEV VM, 1992, P SOC PHOTO-OPT INS, V1715, P381

[4] Sb-based monolithic VCSEL operating near 2.2μm at room temperature [J].

Baranov, AN ;

Rouillard, Y ;

Boissier, G ;

Grech, P ;

Gaillard, S ;

Alibert, C .

ELECTRONICS LETTERS, 1998, 34 (03) :281-282

[5] Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at λ≈8.5 μm [J].

Gmachl, C ;

Capasso, F ;

Faist, J ;

Hutchinson, AL ;

Tredicucci, A ;

Sivco, DL ;

Baillargeon, JN ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (12) :1430-1432

[6] HIGH SINGLE-TRANSVERSE-MODE OUTPUT FROM EXTERNAL-CAVITY SURFACE-EMITTING LASER-DIODES [J].

HADLEY, MA ;

WILSON, GC ;

LAU, KY ;

SMITH, JS .

APPLIED PHYSICS LETTERS, 1993, 63 (12) :1607-1609

[7] INTRACAVITY LASER SPECTROSCOPY WITH VIBRONIC SOLID-STATE LASERS .1. SPECTROTEMPORAL TRANSIENT-BEHAVIOR OF A TI-SAPPHIRE LASER [J].

KACHANOV, A ;

CHARVAT, A ;

STOECKEL, F .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1994, 11 (12) :2412-2421

[8]

Kachanov A. A., 1989, Soviet Journal of Quantum Electronics, V19, P95, DOI 10.1070/QE1989v019n01ABEH007723

[9] Photopumped lasing at 1.25 mu m of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers [J].

Larson, MC ;

Kondow, M ;

Kitatani, T ;

Tamura, K ;

Yazawa, Y ;

Okai, M .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (12) :1549-1551

[10] Submilliamp long wavelength vertical cavity lasers [J].

Margalit, NM ;

Babic, DI ;

Streubel, K ;

Mirin, RP ;

Naone, RL ;

Bowers, JE ;

Hu, EL .

ELECTRONICS LETTERS, 1996, 32 (18) :1675-1677