Ultrafast growth of single-crystalline Si nanowires

被引：21

作者：

Chang, J. B. ^{[1
]}

Liu, J. Z. ^{[1
]}

Yan, P. X. ^{[1
]}

Bai, L. F. ^{[1
]}

Yan, Z. J. ^{[1
]}

Yuan, X. M. ^{[1
]}

Yang, Q. ^{[1
]}

机构：

[1] Lanzhou Univ, Inst Plasma & Met Mat, Lanzhou 730000, Peoples R China

来源：

MATERIALS LETTERS | 2006年 / 60卷 / 17-18期

关键词：

SiNWs;

D O I：

10.1016/j.matlet.2005.12.085

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 degrees C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid-liquid-solid (SLS). Although gas phase of vapor-liquid-solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2125 / 2128

页数：4

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