Array-orderly single crystalline silicon nano-wires

被引：37

作者：

Niu, JJ ^{[1
]}

Sha, J ^{[1
]}

Ma, XY ^{[1
]}

Xu, J ^{[1
]}

Yang, D ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Phys, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 367卷 / 5-6期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0009-2614(02)01731-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Array-orderly single crystal silicon nano-wires (SiNWs) using self-organized nano-holes of anodically oxidized aluminum were fabricated. By field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM), the well-orderly single crystal SiNWs arrays were observed. The interval of the SiNWs is excellent symmetrical and consentaneous. The diameter and the length are around 35 nm and 4 mum, respectively. Furthermore, the energy dispersive X-ray spectroscopy analysis (EDX) indicated that the SiNWs consist of silicon core and silicon oxide sheath mainly. The Raman scattering was also carried out to analyze the structure of the oriented SiNWs. Finally, the growth mechanism of the SiNWs was discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：528 / 532

页数：5

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