Nanoscale in-depth modification of Cr-O-Si layers

被引:4
作者
Bertoti, I
Toth, A
Mohai, M
Kelly, R
Marletta, G
FarkasJahnke, M
机构
[1] UNIV TRENT, DIPARTIMENTO FIS, I-38050 POVO, TRENTO, ITALY
[2] UNIV BASILICATA, DIPARTIMENTO CHIM, I-85100 POTENZA, ITALY
[3] HUNGARIAN ACAD SCI, TECH PHYS RES INST, H-1325 BUDAPEST, HUNGARY
关键词
D O I
10.1016/S0168-583X(96)00577-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In-depth modification of Cr-O-Si layers on a nanoscale has been performed by low energy inert (Ar+, He+) and reactive (N-2(+)) ions. Chemical and short range structural investigations were done by XPS. Cr and Si were essentially oxidised in the as-prepared (i.e. virgin) samples. Ar+ bombardment led to a nearly complete reduction of Cr to Cr-0. At the same time, about one third of the oxidised Si was converted to Si-0, which was shown to form Si-Cr bonds. Also, silicide type clusters, predicted earlier by XPS, have been identified by glancing angle electron diffraction. He+ bombardment led to an increase of the surface O concentration. This was manifested also in the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment and conversion of Cr and Si predominantly to Cr3+-O, Cr6+-O and Si4+-O. With N-2(+) bombardment formation of Cr-N and Si-N bonds was observed. The thickness of the transformed surface layers were about 5 nm, 9 nm and 30 nm for Ar, N and He projectiles as estimated by TRIM calculations. The observed transformations were interpreted in terms of the relative importance of sputtering or ion induced mixing for Ar+ and He+, and also by the role of thermodynamic driving forces.
引用
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页码:510 / 513
页数:4
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