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DISTRIBUTION OF INTERMEDIATE OXIDATION-STATES AT THE SILICON SILICON DIOXIDE INTERFACE OBTAINED BY LOW-ENERGY ION-IMPLANTATION

被引：14
作者：
BENKHEROUROU, O
DEVILLE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 06期
关键词：
D O I：
10.1116/1.575486
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：3125 / 3129
页数：5
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