Effect of hafnium germanate formation on the interface of HfO2/germanium metal oxide semiconductor devices

被引：66

作者：

Van Elshocht, S ^{[1
]}

Caymax, M ^{[1
]}

Conard, T ^{[1
]}

De Gendt, S ^{[1
]}

Hoflijk, I ^{[1
]}

Houssa, M ^{[1
]}

De Jaeger, B ^{[1
]}

Van Steenbergen, J ^{[1
]}

Heyns, M ^{[1
]}

Meuris, M ^{[1
]}

机构：

[1] IMEC VZW, B-3001 Heverlee, Belgium

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 14期

关键词：

D O I：

10.1063/1.2192576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the thermal stability of HfO2 thin layers on germanium and the substrate interface development. HfO2 was deposited on Ge substrates and annealed in O-2 or N-2 at 500 degrees C (substrate temperature). After O-2 anneal, we observed the formation of hafnium germanate, which is stable at 500 degrees C in N-2 as opposed to GeO2 that desorbs as GeO. We believe that this hafnium germanate is an oxygen barrier and as such is at the origin of the much thinner interface between HfO2 and germanium as compared to silicon. In addition, results suggest that the HfGeOx is related to the high interface state density frequently reported for germanium metal oxide semiconductor devices.

引用

页数：3

共 14 条

[1]

Chui CO, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P437, DOI 10.1109/IEDM.2002.1175872

[2] Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-insulator substrates [J].