Preparation of clean and atomically flat germanium(001) surfaces

被引：78

作者：

Hovis, JS

Hamers, RJ

Greenlief, CM ^{[1
]}

机构：

[1] Univ Missouri, Dept Chem, Columbia, MO 65211 USA

[2] Univ Wisconsin, Dept Chem, Madison, WI 53706 USA

来源：

SURFACE SCIENCE | 1999年 / 440卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

germanium; low index single crystal surfaces; scanning tunneling microscopy; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(99)00866-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A two-part procedure for preparing clean and atomically flat Ge(001)-(2 x 1) surfaces is presented and characterized. The ex situ part of the procedure consists of a wet chemical treatment followed by exposure to ultraviolet-generated ozone. The in situ part of the procedure consists of outgassing for several hours in ultrahigh vacuum followed by flash annealing. Scanning tunneling microscopy shows that the surfaces are flat on the >50 nm length scale and that atomic resolution can be achieved. X-ray photoelectron spectroscopy shows the formation and removal of an oxide layer. It is estimated that approximately 0.02-0.03 monolayers of carbon are present at the annealed surface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L815 / L819

页数：5

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