Carrier localization and photoluminescence in porous silicon

被引：21

作者：

Ninno, D

Iadonisi, G

Buonocore, F

机构：

[1] Univ Naples Federico II, INFM, I-80125 Naples, Italy

[2] Univ Naples Federico II, Dipartimento Sci Fis, I-80125 Naples, Italy

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 09期

关键词：

nanostructures; semiconductors; electronic states (localized); optical properties;

D O I：

10.1016/S0038-1098(99)00308-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We show that the optical absorption and emission energies in porous silicon can be accounted for in a quantum wire confinement model where both the electron and the hole are localized by lateral surface wire undulations. Localization energies for both the particles have been numerically calculated within the effective mass approximation showing that there exists a limited class of wire geometries which are consistent with porous silicon optical and structure analysis data. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：521 / 525

页数：5

相关论文

共 28 条

[1] Nature of luminescent surface states of semiconductor nanocrystallites [J].

Allan, G ;

Delerue, C ;

Lannoo, M .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :2961-2964

[2] IDENTIFICATION OF RADIATIVE TRANSITIONS IN HIGHLY POROUS SILICON [J].

CALCOTT, PDJ ;

NASH, KJ ;

CANHAM, LT ;

KANE, MJ ;

BRUMHEAD, D .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1993, 5 (07) :L91-L98

[3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[4] VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].

CULLIS, AG ;

CANHAM, LT .

NATURE, 1991, 353 (6342) :335-338

[5] Size dependence of excitons in silicon nanocrystals - Comment [J].

Delerue, C ;

Lannoo, M ;

Allan, G .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3038-3038

[6] Origin of porous silicon photoluminescence: Evidence for a surface bound oxyhydride-like emitter [J].

Gole, JL ;

Dudel, FP ;

Grantier, D ;

Dixon, DA .

PHYSICAL REVIEW B, 1997, 56 (04) :2137-2153

[7] Size-controlled percolation pathways for electrical conduction in porous silicon [J].

Hamilton, B ;

Jacobs, J ;

Hill, DA ;

Pettifer, RF ;

Teehan, D ;

Canham, LT .

NATURE, 1998, 393 (6684) :443-445

[8] THEORETICAL-ANALYSIS OF THE GEOMETRIES OF THE LUMINESCENT REGIONS IN POROUS SILICON [J].

HILL, NA ;

WHALEY, KB .

APPLIED PHYSICS LETTERS, 1995, 67 (08) :1125-1127

[9] SIZE DEPENDENCE OF EXCITONS IN SILICON NANOCRYSTALS [J].

HILL, NA ;

WHALEY, KB .

PHYSICAL REVIEW LETTERS, 1995, 75 (06) :1130-1133

[10] NONLINEAR-TRANSMISSION SPECTRA OF POROUS SILICON - MANIFESTATION OF SIZE QUANTIZATION [J].

KLIMOV, VI ;

DNEPROVSKII, VS ;

KARAVANSKII, VA .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2691-2693