High-quality growth of AlN epitaxial layer by plasma-assisted molecular-beam epitaxy

被引：20

作者：

Jeganathan, K ^{[1
]}

Kitamura, T ^{[1
]}

Shimizu, M ^{[1
]}

Okumura, H ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2002年 / 41卷 / 1AB期

关键词：

molecular beam epitaxy; excitonic transitions; cathodoluminescence; X-ray diffraction; AlN;

D O I：

10.1143/JJAP.41.L28

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth and characterization of high-quality h-AlN epitaxial layers on basal c-plane sapphire substrates by plasma-assisted molecular-beam epitaxy (MBE). The c-axis lattice constant has been found to vary, With the layer thickness. AlN layers grown in an intermediate Al/N growth regime show a 2D streaky reflection high-energy electron diffraction (RHEED) pattern and the surface morphologies have few surface irregularities, and sufficient to speculate that the layers are free from large Al metal droplets. The full width at half maximum (FWHM) (omega scan) of the AlN layers along the symmetric (0002) and asymmetric (11-24) diffraction planes were 42 and 180 arcsec, respectively. Excitonic transitions (Ddegrees, X and Adegrees, X), indicating high quality of the layers, have been found in all the samples by cathodoluminescence measurements, and a violet band has been attributed to either shallow or deep donor pair recombination.

引用

页码：L28 / L30

页数：3

共 14 条

[1] OBSERVATION OF A NEGATIVE ELECTRON-AFFINITY FOR HETEROEPITAXIAL ALN ON ALPHA(6H)-SIC(0001) [J].

BENJAMIN, MC ;

WANG, C ;

DAVIS, RF ;

NEMANICH, RJ .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3288-3290

[2] PHOTO-LUMINESCENCE AS A DIAGNOSTIC OF SEMICONDUCTORS [J].

DEAN, PJ .

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1982, 5 (1-2) :89-174

[3] High temperature growth of AlN by plasma-enhanced molecular beam epitaxy [J].

Fan, ZY ;

Rong, G ;

Browning, J ;

Newman, N .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (1-2) :80-87

[4] Novel AlN/GaN insulated gate heterostructure field effect transistor with modulation doping and one-dimensional simulation of charge control [J].

Imanaga, S ;

Kawai, H .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (11) :5843-5858

[5] An AlN/GaN insulated gate heterostructure field effect transistor with regrown n+ GaN source and drain contact [J].

Kawai, H ;

Hara, M ;

Nakamura, F ;

Asatsuma, T ;

Kobayashi, T ;

Imanaga, S .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :738-741

[6]

KIM W, 1999, SOLID STATE ELECT, V41, P169

[7] AlN on sapphire and on SiC: CL and Raman study [J].

Kornitzer, K ;

Limmer, W ;

Thonke, K ;

Sauer, R ;

Ebling, DG ;

Steinke, L ;

Benz, KW .

JOURNAL OF CRYSTAL GROWTH, 1999, 201 :441-443

[8]

MartinezDelgado B, 1997, AM J HEMATOL, V55, P1, DOI 10.1002/(SICI)1096-8652(199705)55:1<1::AID-AJH1>3.0.CO

[9]

2-Y

[10] Progress and prospects of group-III nitride semiconductors [J].

Mohammad, SN ;

Morkoc, H .

PROGRESS IN QUANTUM ELECTRONICS, 1996, 20 (5-6) :361-525

← 1 2 →