Photonic crystal laser lift-off GaN light-emitting diodes

被引：117

作者：

David, A ^{[1
]}

Fujii, T

Moran, B

Nakamura, S

DenBaars, SP

Weisbuch, C

Benisty, H

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Inst Opt, Lab Charles Fabry, F-91403 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 13期

关键词：

D O I：

10.1063/1.2189159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and study of laser lift-off GaN-based light-emitting diodes, thinned down to the microcavity regime, incorporating two-dimensional photonic crystal diffraction gratings. Angle-resolved measurements reveal the photonic behavior of the devices, which strongly depends on the GaN thickness. Data point out the detrimental role of metal absorption. We explore theoretically the possibility to limit this loss channel. (c) 2006 American Institute of Physics.

引用

页数：3

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