Float zone growth of Nd:GdVO4 single crystals along [110] direction and their laser performance

被引:22
作者
Higuchi, M [1 ]
Sagae, H
Kodaira, K
Ogawa, T
Wada, S
Machida, H
机构
[1] Hokkaido Univ, Grad Sch Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510198, Japan
[3] Tokin Corp, Tsukuba, Ibaraki 3050875, Japan
关键词
doping; floating zone technique; rare earth compounds; vanadates; phosphors; solid state lasers;
D O I
10.1016/j.jcrysgro.2003.12.058
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nd:GdVO4 single crystals 8 min in diameter were successfully grown along the [110] direction by the floating zone method. The grown crystals had no cracks and inclusions for any Nd-concentration. The polarizing microscopy proved that the grown crystals were optically uniform since no low-angle grain boundaries and no growth striations were observed. The Nd-concentration was uniform over the crystal both along the growth and radial directions. The grown crystals had a strong absorption for pi-polarization at 879 nm, which is closer to the fluorescence wavelength of 1063 nm than conventional pumping wavelength of 808 nm for the Nd-lasers. In the laser oscillation experiments, the maximum slope efficiency of 77% was obtained for the Nd 2 at%-doped crystal by pumping with a pi-polarized beam at 879 nm. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:284 / 289
页数:6
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