Float zone growth and laser performance of Nd:GdVO4 single crystals

被引:28
作者
Shonai, T [1 ]
Higuchi, M
Kodaira, K
Ogawa, T
Wada, S
Machida, H
机构
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
[2] MegaOpto Corp, Wako, Saitama 3510114, Japan
[3] RIKEN, Inst Phys & Chem Res, Wako, Saitama 3510114, Japan
[4] Tokin Corp, Kumagaya, Saitama 3600843, Japan
关键词
defects; doping; floating zone technique; vanadates; solid state lasers;
D O I
10.1016/S0022-0248(02)01138-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Neodymium-doped gadolinium orthovanadate (Nd:GdVO4) single crystals were successfully grown by the floating zone method. At growth rates between 5 and 30 mm/h, Nd:GdVO4 single crystals with Nd content of 2-15 at% could be grown without macroscopic defects such as second phase precipitates and cellular growth. Grown crystals showed no step-facetting and had a desired crystal diameter. From the etch pit patterns, dislocation density was decreased from 10(5) to 10(4) cm(-2) during the growth when the diameter of grown crystals was less than 3 mm and when Nd content was less than 10 at %. Growths rate lower than 30 mm/h was also favorable to decrease the dislocation density to the order of 10(4) cm(-2). Lasing properties were measured for c-cut sample crystals with Nd contents of 2-10 at% grown at 25 mm/h and the maximum slope efficiency was 49% for the sample with 5 at%. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:159 / 164
页数:6
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