Preparation of P-rich InP surfaces via MOCVD and surface characterization in UHV

被引:32
作者
Hannappel, T
Visbeck, S
Knorr, K
Mahrt, J
Zorn, M
Willig, F
机构
[1] Hahn Meitner Inst, CD, D-14109 Berlin, Germany
[2] Tech Univ Berlin, Berlin, Germany
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 04期
关键词
D O I
10.1007/s003390051026
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
For the first time direct contamination-free transfer to UHV was achieved for the P-rich InP(100) surface that is the easiest to prepare and control in the MOCVD environment. To avoid contamination during transfer a commercial MOCVD apparatus was modified to allow for transfer of samples to the 10(-9) mbar UHV range within a very shea time (less than 20 s) [1]. Epitaxial InP(100) films were prepared with TBP (tertiarybutylphosphine) and TMIn (trimethylindium) as precursors. In situ reflectance anisotropy spectroscopy (RAS) was carried out in the MOCVD environment. After transfer of the sample to UHV the same RAS spectrum was recovered. Auger-electron spectra (AES) confirmed the P-termination of the surface reconstructions suggested by RAS.
引用
收藏
页码:427 / 431
页数:5
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