High-performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator

被引：61

作者：

Kim, J. B. ^{[1
]}

Fuentes-Hernandez, C. ^{[1
]}

Kippelen, B. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 24期

基金：

美国国家科学基金会;

关键词：

amorphous semiconductors; barium compounds; capacitance; contact resistance; dielectric thin films; gallium compounds; indium compounds; strontium compounds; thin film transistors; zinc compounds;

D O I：

10.1063/1.3054335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on high-performance n-channel thin-film transistors (TFTs) fabricated using amorphous indium gallium zinc oxide (a-IGZO) and amorphous Ba0.5Sr0.5TiO3 (a-BST) as the channel and gate dielectric layers, respectively. a-BST/a-IGZO TFTs achieve low-voltage operation with a high saturation mobility value of 10 +/- 1 cm(2)/V s, excellent subthreshold slopes of 0.06 +/- 0.01 V/decade, a low threshold voltage of 0.5 +/- 0.1 V, and a high on-off current ratio up to 8x10(7) (W/L=1000 mu m/5 mu m) at 3 V. The high capacitance density of a-BST (145 +/- 2 nF/cm(2)) and the small contact resistance, smaller than the channel resistance, are responsible for the high performance of these TFTs.

引用

页数：3

共 12 条

[1] Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs [J].

Ezhilvalavan, S ;

Tseng, TY .

MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (03) :227-248

[2] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[3] Modeling and simulation of polycrystalline ZnO thin-film transistors [J].

Hossain, FM ;

Nishii, J ;

Takagi, S ;

Ohtomo, A ;

Fukumura, T ;

Fujioka, H ;

Ohno, H ;

Koinuma, H ;

Kawasaki, M .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (12) :7768-7777

[4] Comprehensive study on the transport mechanism of amorphous indium-gallium-zinc oxide transistors [J].

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (11) :H873-H877

[5] High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates [J].

Kang, KyongTae ;

Lim, Mi-Hwa ;

Kim, Ho-Gi ;

Kim, Il-Doo ;

Hong, Jae-Min .

APPLIED PHYSICS LETTERS, 2007, 90 (04)

[6]

KIM M, 2006, APPL PHYS LETT, V90

[7] Contact resistance in organic thin film transistors [J].

Klauk, H ;

Schmid, G ;

Radlik, W ;

Weber, W ;

Zhou, LS ;

Sheraw, CD ;

Nichols, JA ;

Jackson, TN .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :297-301

[8] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[9] Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment [J].

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Mo, Yeon-Gon ;

Kim, Hye Dong ;

Kim, Sun-Il .

APPLIED PHYSICS LETTERS, 2007, 90 (26)

[10] High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].

Yabuta, Hisato ;

Sano, Masafumi ;

Abe, Katsumi ;

Aiba, Toshiaki ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

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