High field-effect mobility ZnO thin-film transistors with Mg-doped Ba0.6Sr0.4TiO3 gate insulator on plastic substrates

被引：26

作者：

Kang, KyongTae ^{[1
]}

Lim, Mi-Hwa

Kim, Ho-Gi

Kim, Il-Doo

Hong, Jae-Min

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Korea Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 04期

关键词：

D O I：

10.1063/1.2434150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the influence of Mg acceptor doping on the markedly reduced leakage current characteristics (< 5x10(-8) A/cm(2) at 2 MV/cm) of Ba0.6Sr0.4TiO3 thin films. The suitability of room temperature deposited Mg-doped Ba0.6Sr0.4TiO3 films as gate insulators for low-voltage ZnO thin-film transistors (TFTs) (< 6 V) was investigated. All room temperature processed ZnO-TFTs on plastic substrates exhibited a high field-effect mobility of 16.3 cm(2)/V s and a current on/off ratio of 6.4x10(4). The threshold voltage and subthreshold swing were 2.8 V and 400 mV/decade, respectively. (c) 2007 American Institute of Physics.

引用

页数：3

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