ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulators

被引：92

作者：

Siddiqui, J. ^{[1
]}

Cagin, E. ^{[1
]}

Chen, D. ^{[1
]}

Phillips, J. D. ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 21期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2204574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of ZnO thin-film transistors with high-k (Ba,Sr)TiO3 gate dielectrics are presented. The ZnO and (Ba,Sr)TiO3 thin films were deposited on Pt, exhibiting polycrystalline characteristics. The thin-film devices demonstrated transistor behavior over the range of 0-10 V with a stable threshold voltage of approximately 1.2 V. The field effect mobility, subthreshold slope, and on/off ratio were measured to be 2.3 cm(2) V-1 s(-1), 0.25 V/decade, and 1.5x10(8), respectively. The measured transistor performance characteristics suggest that ZnO/(Ba,Sr)TiO3 structures are well suited for both polycrystalline thin-film transistors for display applications and future higher performance transistors based on single crystal ZnO. (c) 2006 American Institute of Physics.

引用

页数：3

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