Role of the collecting resistive layer on the static characteristics of a 1D a-Si:H thin film position sensitive detector

被引：16

作者：

Fortunato, E ^{[1
]}

Martins, R ^{[1
]}

机构：

[1] CTR EXCELLENCE MICROELECT & OPTOELECT PROC,P-2825 MONTE DE CAPARICA,PORTUGAL

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1996年 / 67卷 / 08期

关键词：

D O I：

10.1063/1.1147098

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The aim of this work is to present an analytical model able to interpret the role of the thin collecting resistive layer on the static performances exhibited by 1D amorphous silicon hydrogenated p-i-n thin film position sensitive detectors. The data obtained show that the devices present a linearity and a spatial resolution, of respectively, better than 99% and 20 mu m for a spatial detection limit of about 80 mm, highly dependent on the characteristics exhibited by the collecting resistive layer that should have sheet resistivities in the range of 10 to 10(3) Omega/sq, as predicted by the model proposed. (C) 1996 American Institute of Physics.

引用

页码：2702 / 2707

页数：6

共 16 条

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