Electron-muon dynamics in n-type silicon

被引：7

作者：

Hitti, B

Kreitzman, SR

Estle, TL

Lichti, RL

Lightowlers, EC

机构：

[1] RICE UNIV,DEPT PHYS,HOUSTON,TX 77251

[2] TEXAS TECH UNIV,DEPT PHYS,LUBBOCK,TX 79409

[3] UNIV LONDON KINGS COLL,DEPT PHYS,LONDON WC2R 2LS,ENGLAND

来源：

HYPERFINE INTERACTIONS | 1997年 / 105卷 / 1-4期

关键词：

D O I：

10.1023/A:1012680127464

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

We report RF-mu SR results in lightly n-doped Si samples. Measurement of the diamagnetic amplitude in both the [100] and [111] directions for a sample with N-D less than or equal to 5 x 10(12) cm(-3) clarifies the charge/spin electron-exchange dynamics for bond-centered muonium and yields a 3300 Angstrom(2) electron-capture cross section at Mu(BC)(+). An increase in the Mu(BC)(0) RF amplitude observed at 30 K in a sample of N-D similar or equal to 2 x 10(13) cm(-3) provides direct evidence for enhanced low-temperature creation of Mu(BC)(0) at the expense of Mu(T)(0) with increased electron concentration.

引用

页码：321 / 325

页数：5

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