SiGe heterostructure CMOS circuits and applications

被引：22

作者：

Parker, EHC ^{[1
]}

Whall, TE ^{[1
]}

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(99)00095-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A review is given of the 300 K electron and hole mobilities in Si/SeGe heterostructures and the potential applications of these materials in CMOS technology. Prospects for further enhancements in carrier mobility and CMOS process design options are discussed for Si/SiGe strained layers on Si and on relaxed SiGe 'virtual substrates'. Recent work on heterointerface quality, limited area growth of virtual substrates, carrier mobility and velocity-field characteristics is also reported. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1497 / 1506

页数：10

共 22 条

[1]

ANSARIPOUR G, UNPUB

[2]

Armstrong MA, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P761, DOI 10.1109/IEDM.1995.499329

[3]

BOULLION P, IEDM 96, P959

[4]

FEENSTRA RM, 1995, J APP PHYS, V78, P6391

[5]

Fischer H. G., COMMUNICATION

[6]

Garchery L, 1995, MATER RES SOC SYMP P, V379, P321, DOI 10.1557/PROC-379-321

[7]

GRASBY T, 1999, APPL PHYS LETT, V74

[8] The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers [J].

Hammond, R ;

Phillips, PJ ;

Whall, TE ;

Parker, EHC ;

Graf, T ;

VonKanel, H ;

Shields, AJ .

APPLIED PHYSICS LETTERS, 1997, 71 (17) :2517-2519

[9]

HOCK G, 1998, EMRS SPRING M JUN 16

[10] THEORETICAL HOLE MOBILITY IN A NARROW SI/SIGE QUANTUM-WELL [J].

LAIKHTMAN, B ;

KIEHL, RA .

PHYSICAL REVIEW B, 1993, 47 (16) :10515-10527

← 1 2 3 →