Domain structures and piezoelectric properties in epitaxial Pb(Zr0.35,Ti0.65)O3 thin films

被引：20

作者：

Kim, Yong Kwan

Morioka, Hitoshi

Ueno, Risako

Yokoyama, Shintaro

Funakubo, Hiroshi

Lee, Kilho

Baik, Sunggi

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Ferroelect Nanomat Lab, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 25期

基金：

新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2214169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The ferroelastic twin-domain structures and piezoelectric properties were investigated in epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films with various c-domain volume fractions by metal organic chemical vapor deposition on (100)(c)SrRuO3/(100)SrTiO3 substrates. The domain structures could be characterized into three regions: a-domain dominant, c-domain dominant, and their mixed domain regions. The mixed domain structure is quite unusual but formed a bilayer with two regions of different a/c domain proportions: the bottom layer is the a(1)-a(2) domain structure and top layer is the a-c domain structure. The films of the mixed region have attained largest piezoelectric coefficients, d(33), presumably due to enhanced a-to-c domain switching. (c) 2006 American Institute of Physics.

引用

页数：3

共 15 条

[1] Size effect in mesoscopic epitaxial ferroelectric structures:: Increase of piezoelectric response with decreasing feature size [J].

Bühlmann, S ;

Dwir, B ;

Baborowski, J ;

Muralt, P .

APPLIED PHYSICS LETTERS, 2002, 80 (17) :3195-3197

[2] SUBSTRATE EFFECTS ON THE STRUCTURE OF EPITAXIAL PBTIO3 THIN-FILMS PREPARED ON MGO, LAALO3, AND SRTIO3 BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

FOSTER, CM ;

LI, Z ;

BUCKETT, M ;

MILLER, D ;

BALDO, PM ;

REHN, LE ;

BAI, GR ;

GUO, D ;

YOU, H ;

MERKLE, KL .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2607-2622

[3] MICROSTRUCTURE OF PBTIO3 THIN-FILMS DEPOSITED ON (001)MGO BY MOCVD [J].

GAO, Y ;

BAI, G ;

MERKLE, KL ;

SHI, Y ;

CHANG, HLM ;

SHEN, Z ;

LAM, DJ .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) :145-153

[4] Domain structure control of (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100)cSrRuO3/(100)SrTiO3 substrates -: art. no. 212905 [J].

Kim, YK ;

Morioka, H ;

Ueno, R ;

Yokoyama, S ;

Funakubo, H .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[5] Domain structure of epitaxial PbTiO3 thin films on Pt(001)/MgO(001) substrates [J].

Kim, YK ;

Lee, K ;

Baik, S .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (01) :236-240

[6] Domain formation in epitaxial Pb(Zr,Ti)O3 thin films [J].

Lee, KS ;

Choi, JH ;

Lee, JY ;

Baik, S .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (08) :4095-4102

[7] In situ observation of ferroelectric 90°-domain switching in epitaxial Pb(Zr,Ti)O3 thin films by synchrotron x-ray diffraction [J].

Lee, KS ;

Kim, YK ;

Baik, S ;

Kim, J ;

Jung, IS .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2444-2446

[8] Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films [J].

Morioka, H ;

Asano, G ;

Oikawa, T ;

Funakubo, H ;

Saito, K .

APPLIED PHYSICS LETTERS, 2003, 82 (26) :4761-4763

[9] Dynamics of ferroelastic domains in ferroelectric thin films [J].

Nagarajan, V ;

Roytburd, A ;

Stanishevsky, A ;

Prasertchoung, S ;

Zhao, T ;

Chen, L ;

Melngailis, J ;

Auciello, O ;

Ramesh, R .

NATURE MATERIALS, 2003, 2 (01) :43-47

[10] Improvement of property of Pb(ZrxTi1-x)O3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition [J].

Nagashima, K ;

Aratani, M ;

Funakubo, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (10A) :L996-L998

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