Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O3 thin films

100% polar-axis (c-axis)-oriented epitaxial Pb(Zr0.35Ti0.65)O-3 (PZT) thin films were grown and their large remanent polarization (P-r) was directly measured. Perfectly c-axis-oriented epitaxial PZT thin films were obtained on (100)(c)SrRuO3//(100)SrTiO3 substrates when the deposition temperature increased to 540 degreesC together with a decrease in the film thickness down to 50 nm. Polarization-electric-field hysteresis loops were well saturated and had a square shape. The P-r of a 50 nm thick film saturated at 0.9 V, and its value was over 90 muC/cm(2); almost independent of the measurement frequency within the range from 20 Hz to 1 kHz. This value was in good agreement with the estimated one from the a- and c-axes mixture-oriented epitaxial PZT film having the same composition taking into account the fact that only the c-axis-oriented domain contributed to the polarization. On the other hand, the coercive field value of a perfectly c-axis-oriented film was 140 kV/cm and almost the same as that of the mixture-oriented one having the same film thickness. These results show that PZT has a large P-r applicable for high-density ferroelectric random access memory. (C) 2003 American Institute of Physics.