Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition

被引：51

作者：

Aratani, M ^{[1
]}

Oikawa, T ^{[1
]}

Ozeki, T ^{[1
]}

Funakubo, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 07期

关键词：

D O I：

10.1063/1.1391229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial-grade polycrystalline Pb(Zr,Ti)O-3 (PZT) films were deposited at 415 degreesC by source- gas-pulsed-introduced metalorganic chemical vapor deposition. The polycrystalline PZT film with Zr/(Zr+Ti)=0.35 which was prepared on (111)Pt/Ti/SiO2/Si substrate showed highly (100)- and (001)-preferred orientations. Well-saturated ferroelectricity with a remanent polarization (P-r) and coercive field of 41.4 muC/cm(2) and 78.5 kV/cm, respectively, was obtained. This P-r value is almost the same as that of epitaxially grown films at 580 degreesC with the same composition and orientations taking into account of the volume fraction of (100) and (001) orientations. (C) 2001 American Institute of Physics.

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页码：1000 / 1002

页数：3

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