Relaxation mechanism of ferroelectric switching in Pb(Zr,Ti)O3 thin films

被引:118
作者
Lohse, O [1 ]
Grossmann, M
Boettger, U
Bolten, D
Waser, R
机构
[1] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
[2] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
关键词
D O I
10.1063/1.1331341
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization reversal process of tetragonal Pb(Zr,Ti)O-3 thin films has been intensively studied using conventional hysteresis and rectangle pulse measurements. Decreasing the voltage level of the pulses significantly slows down the polarization switching to the range of milliseconds. The switching current response shows a Curie-von Schweidler behavior over a broad time range. The transient current and the frequency dependence of the P-V loops of these films compared to the properties of ferroelectric single crystals show some similarities but also significant differences. The theoretical models of the classical ferroelectric phase transition and especially the conditions of the pulse measurements in single crystals and thin films are discussed. It leads to the conclusion that it is not the domain wall structure and domain wall motion that determine the polarization reversal but dissipative polarization processes which can take place in both ferroelectric and nonferroelectric high-k dielectric thin films. (C) 2001 American Institute of Physics.
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收藏
页码:2332 / 2336
页数:5
相关论文
共 34 条
[1]   Granulation, Phase Change, and Microstructure - Kinetics of Phase Change. III [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1941, 9 (02) :177-184
[2]   Kinetics of phase change I - General theory [J].
Avrami, M .
JOURNAL OF CHEMICAL PHYSICS, 1939, 7 (12) :1103-1112
[3]  
Avrami M., 1940, J CHEM PHYS, V8, P212
[4]   Dielectric relaxation of Ba0.7Sr0.3TiO3 thin films from 1 mHz to 20 GHz [J].
Baniecki, JD ;
Laibowitz, RB ;
Shaw, TM ;
Duncombe, PR ;
Neumayer, DA ;
Kotecki, DE ;
Shen, H ;
Ma, QY .
APPLIED PHYSICS LETTERS, 1998, 72 (04) :498-500
[5]   Activation field and fatigue of (Pb, La)(Zr, Ti)O3 thin films [J].
Chen, IW ;
Wang, Y .
APPLIED PHYSICS LETTERS, 1999, 75 (26) :4186-4188
[6]  
Chen X., 1993, Integrated Ferroelectrics, V3, P355, DOI 10.1080/10584589308216691
[7]   FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES [J].
DEARAUJO, CAP ;
CUCHIARO, JD ;
MCMILLAN, LD ;
SCOTT, MC ;
SCOTT, JF .
NATURE, 1995, 374 (6523) :627-629
[8]  
DISSADO LA, 1981, J MATER SCI, V16, P1410
[9]  
EATON SS, 1988 IEEE INT SOL ST, P130
[10]  
FATUZZO E, 1967, FERROELECTRICITY SEL