Large remanent polarization and coercive force by 100% 180° domain switching in epitaxial Pb(Zr0.5Ti0.5)O3 capacitor

被引：26

作者：

Ishida, J

Yamada, T

Sawabe, A

Okuwada, K

Saito, K

机构：

[1] Aoyama Gakuin Univ, Dept Elect Engn & Elect, Setagaya Ku, Tokyo 1578572, Japan

[2] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan

[3] Philips Analyt, Applicat Lab, Minato Ku, Tokyo 1088507, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 03期

关键词：

D O I：

10.1063/1.1433912

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr0.5Ti0.5)O-3 (PZT) thin film was heteroepitaxially grown on an iridium/magnesium oxide (Ir/MgO) (001) substrate using the metalo-organic decomposition method, and its crystal orientation and ferroelectric properties were investigated. The Ir film by rf-magnetron sputtering on a MgO single crystal showed high crystallinity with the full width at half maximum of 0.2degrees. The obtained PZT film has a tetragonal structure. Reciprocal space mapping revealed that it consisted of only c-axis orientation. The Ir/PZT/Ir capacitor showed the remanent polarization of 45 mu C/cm(2) and a coercive force of 100 kV/cm. These large values were derived from 100% 180degrees domain switching, which state is difficult to realize in bulky single crystal and ceramics because of piezostress relaxation. (C) 2002 American Institute of Physics.

引用

页码：467 / 469

页数：3

共 6 条

[1]

Jaffe B., 1971, PIEZOELECTRIC CERAMI, P135

[2]

KLEE M, 1993, PHILIPS J RES, V47, P263

[3]

MERZ WJ, 1955, BELL LAB REC, V335

[4] PREPARATION OF PB(ZR,TI)O-3 THIN-FILMS ON IR AND IRO2 ELECTRODES [J].

NAKAMURA, T ;

NAKAO, Y ;

KAMISAWA, A ;

TAKASU, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5207-5210

[5] Epitaxial growth at PZT/Ir interface [J].

Okuwada, K ;

Yoshida, K ;

Saitou, T ;

Sawabe, A .

JOURNAL OF MATERIALS RESEARCH, 2000, 15 (12) :2667-2671

[6] Method of distinguishing SrBi2Ta2O9 phase from fluorite phase using X-ray diffraction reciprocal space mapping [J].

Saito, K ;

Mitsuya, M ;

Nukaga, N ;

Yamaji, I ;

Akai, T ;

Funakubo, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (9B) :5489-5495

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