Etch characteristics of an amorphous refractory absorber

被引:7
作者
Resnick, DJ
Pendharkar, SV
Dauksher, WJ
Cummings, KD
Johnson, WA
Constantine, C
机构
[1] Motorola, Tempe, Arizona 85284
[2] Plasma-Therm, Inc., St. Petersburg, FL 33716
关键词
D O I
10.1016/0167-9317(95)00229-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ECR etch process for defining sub-0.25 mu m features in a TaSiN absorber layer has been developed. A 2000 Angstrom PECVD oxide layer served as a hard mask during the etch. The effect on feature profile has been determined as a function of both rf power and back side temperature. Etch rate uniformity is excellent, with 3 sigma deviations of less than 4% over the center 40 mm of the substrate. Micro-loading issues associated with the etch process have also been characterized. Minimal line edge roughness is observed, and the feasibility for defining 0.10 mu m features has been demonstrated.
引用
收藏
页码:211 / 214
页数:4
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