Elucidating the patterning mechanism of zirconium-based hybrid photoresists

被引:33
作者
Kosma, Vasiliki [1 ]
Kasahara, Kazuki [1 ,2 ,3 ]
Xu, Hong [1 ,2 ]
Odent, Jeremy [1 ,2 ]
Ober, Christopher K. [1 ,2 ]
Giannelis, Emmanuel P. [1 ,2 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Giannelis Grp, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] JSR Corp, Semicond Mat Lab, Fine Elect Res Labs, Yokaichi, Mie, Japan
来源
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2017年 / 16卷 / 04期
关键词
metal oxide photoresists; extreme-UV; scumming; patterning mechanism; OXIDE NANOPARTICLE PHOTORESISTS; ELECTROSPRAY MASS-SPECTROMETRY; EUV LITHOGRAPHY; CLUSTERS; NANOSTRUCTURES; TEMPERATURE;
D O I
10.1117/1.JMM.16.4.041007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];
摘要
We report a series of studies aimed at shedding more light on the development mechanism of zirconium (Zr)-based extreme-UV hybrid photoresists. In earlier works, our group demonstrated that Zr-based hybrid resists are capable of resolving 30-nm half-pitch features with a very high sensitivity in the range of 1 to 20 mJ/cm(2), which renders these materials potential candidates in the area of nonchemically amplified inorganic resists. While attractive because of its high sensitivity, Zr-methacrylic acid suffers from scumming problems. In an effort to better understand what controls sensitivity and scumming phenomena, we employed a combination of analytical techniques (electrospray ionization mass spectrometry, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy) to study the patterning mechanism in detail, to be able to optimize the development process and develop systems with optimal features. (c) 2017 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数:7
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