Direct Patterning of TiO2 Using Step-and-Flash Imprint Lithography

被引:61
作者
Ganesan, Ramakrishnan [1 ]
Dumond, Jarrett [1 ]
Saifullah, Mohammad S. M. [1 ]
Lim, Su Hui [1 ]
Hussain, Hazrat [1 ]
Low, Hong Yee [1 ]
机构
[1] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
step-and-flash nanoimprint lithography; metal oxides; nanolithography; nanofabrication; NANOIMPRINT LITHOGRAPHY; THIN-FILMS; CROSS-LINKERS; SOL; TEMPERATURE; FABRICATION; RESISTS; CONDUCTIVITY; LINEWIDTH; GRATINGS;
D O I
10.1021/nn204405k
中图分类号
O6 [化学];
学科分类号
070301 [无机化学];
摘要
Although step-and-flash imprint lithography, or S-FIL, has brought about tremendous advancement in wafer-scale fabrication of sub-100 nm features of photopolymerizable organic and organo-silicon-based resists, it has not been successful in direct patterning of Inorganic materials such as oxides because of the difficulties associated with resist formulation and its dispensing. In this paper, we demonstrate the proof-of-concept S-FIL of titanium dioxide (TiO2) carried by an acrylate-based formulation containing an allyl-functionalized titanium complex. The prepolymer formulation contains 48 wt metal precursor, but it exhibits low enough viscosity (similar to 5 mPa.s) to be dispensed by an automatic dispensing system, adheres and spreads well on the substrate, is insensitive to pattern density variations, and rapidly polymerizes when exposed to broadband UV radiation to give a yield close to 95%. Five fields, each measuring 1 cm x 1 cm, consisting of 100 nm gratings were successively Imprinted. Heat-treatment of the patterned structures at 450 degrees C resulted in the loss of organics and their subsequent shrinkage without the loss of integrity or aspect ratio and converted them to TiO2 anatase nanostructures as small as 30 nm wide. With this approach, wafer-scale direct patterning of functional oxides on a sub-100 nm scale using S-FIL can become a distinct possibility.
引用
收藏
页码:1494 / 1502
页数:9
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