Probing Charged Impurities in Suspended Graphene Using Raman Spectroscopy

被引：197

作者：

Ni, Zhen Hua ^{[1
]}

Yu, Ting ^{[1
]}

Luo, Zhi Qiang ^{[1
]}

Wang, Ying Ying ^{[1
]}

Liu, Lei ^{[1
]}

Wong, Choun Pei ^{[1
]}

Miao, Jianmin ^{[2
]}

Huang, Wei ^{[3
]}

Shen, Ze Xiang ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Math & Phys Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

[2] Nanyang Technol Univ, Micromachines Ctr, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[3] Nanjing Univ Posts & Telecommun, Jiangsu Key Lab Organ Elect & Informat Displays, Nanjing 210046, Peoples R China

来源：

ACS NANO | 2009年 / 3卷 / 03期

关键词：

suspended graphene; charged impurities; Raman mobility; scattering rate; SINGLE-LAYER; SCATTERING; TRANSPORT; STRAIN;

D O I：

10.1021/nn900130g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charged impurity (CI) scattering is one of the dominant factors that affects the carrier mobility in graphene. In this paper, we use Raman spectroscopy to probe the charged impurities in suspended graphene. We find that the 2D band intensity is very sensitive to the CI concentration in graphene, while the G band intensity is not affected. The intensity ratio between the 2D and G bands, I-2D/I-G, of suspended graphene is much stronger compared to that of nonsuspencled graphene, due to the extremely low Cl concentration in the former. This finding is consistent with the ultrahigh carrier mobility in suspended graphene observed in recent transport measurements. Our results also suggest that at low CI concentrations that are critical for device applications, the I-2D/I-G ratio is a better criterion in selecting high quality single layer graphene samples than is the G band blue shift.

引用

页码：569 / 574

页数：6

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