Lattice intrinsic defects and electrical resistivity in pyrite thin films

被引：29

作者：

Ares, JR

Pascual, A ^{[1
]}

Ferrer, IJ

Sánchez, CR

机构：

[1] Univ Autonoma Madrid, Fac Ciencias, Dept Fis Mat, Lab Mat Interes Energet, E-28049 Madrid, Spain

[2] ISCA, CNRS, Lab Chim Met Terres Rares, F-94320 Paris, France

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

pyrite thin films; polycrystalline semiconductors; electrical resistivity; point lattice defects;

D O I：

10.1016/j.tsf.2003.10.102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical resistivity of polycrystalline pyrite thin films has been investigated at 300 Kless than or equal toTless than or equal to615 K. Curved Arrhenius type plots are interpreted as due to a high density of acceptor states created by interacting Fe vacancies partially compensated by S vacancies. Mean energy value of the narrow band created by those Fe vacancies has been measured as similar to 0.11 eV and its standard deviation as similar to0.05 eV. Implications of this view on other properties of the films are discussed. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：233 / 236

页数：4

共 30 条

[1] Specifying targets of future research in photovoltaic devices containing pyrite (FeS2) by numerical modelling [J].