Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates

被引：49

作者：

Li, NX

Daniels-Race, T

Hasan, MA

机构：

[1] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA

[2] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1452784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the influence of matrix materials on the self-organization of InAs nanostructures gown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs, Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure-nanostructure interaction. (C) 2002 American Institute of Physics.

引用

收藏

页码：1367 / 1369

页数：3

相关论文

共 15 条

[1] Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [J].

Brault, J ;

Gendry, M ;

Grenet, G ;

Hollinger, G ;

Desieres, Y ;

Benyattou, T .

APPLIED PHYSICS LETTERS, 1998, 73 (20) :2932-2934

[2] KINETIC SURFACE ROUGHENING IN MOLECULAR-BEAM EPITAXY OF INP [J].

COTTA, MA ;

HAMM, RA ;

STALEY, TW ;

CHU, SNG ;

HARRIOTT, LR ;

PANISH, MB ;

TEMKIN, H .

PHYSICAL REVIEW LETTERS, 1993, 70 (26) :4106-4109

[3] Surface spinodal decomposition in low temperature Al0.48In0.52 grown on InP(001) by molecular beam epitaxy [J].

Grenet, G ;

Gendry, M ;

Oustric, M ;

Robach, Y ;

Porte, L ;

Hollinger, G ;

Marty, O ;

Pitaval, M ;

Priester, C .

APPLIED SURFACE SCIENCE, 1998, 123 :324-328

[4] In situ XPS investigation of indium surface segregation for Ga1-xInxAs and Al1-xInxAs alloys grown by MBE on InP(001) [J].

Grenet, G ;

Bergignat, E ;

Gendry, M ;

Lapeyrade, M ;

Hollinger, G .

SURFACE SCIENCE, 1996, 352 :734-739

[5] GROWTH-PROCESS OF III-V-COMPOUND SEMICONDUCTORS BY MIGRATION-ENHANCED EPITAXY [J].

HORIKOSHI, Y ;

YAMAGUCHI, H ;

BRIONES, F ;

KAWASHIMA, M .

JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) :326-338

[6] Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots [J].

Jeong, WG ;

Dapkus, PD ;

Lee, UH ;

Yim, JS ;

Lee, D ;

Lee, BT .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1171-1173

[7] Self-organization of wire-like InAs nanostructures on InP [J].

Li, HX ;

Zhuang, QD ;

Kong, XW ;

Wang, ZG ;

Daniels-Race, T .

JOURNAL OF CRYSTAL GROWTH, 1999, 205 (04) :613-617

[8] High-density InAs nanowires realized in situ on (100) InP [J].

Li, HX ;

Wu, J ;

Wang, ZG ;

Daniels-Race, T .

APPLIED PHYSICS LETTERS, 1999, 75 (08) :1173-1175

[9] SURFACE SEGREGATION OF 3RD-COLUMN IN GROUP III-V ARSENIDE COMPOUNDS - TERNARY ALLOYS AND HETEROSTRUCTURES [J].

MOISON, JM ;

GUILLE, C ;

HOUZAY, F ;

BARTHE, F ;

VANROMPAY, M .

PHYSICAL REVIEW B, 1989, 40 (09) :6149-6162

[10] Surface roughness and alloy stability interdependence in lattice-matched and lattice-mismatched heteroepitaxy [J].

Priester, C ;

Grenet, G .

PHYSICAL REVIEW B, 2000, 61 (23) :16029-16032