Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots

被引：68

作者：

Jeong, WG ^{[1
]}

Dapkus, PD

Lee, UH

Yim, JS

Lee, D

Lee, BT

机构：

[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon, South Korea

[2] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

[3] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[4] Chonnam Natl Univ, Dept Mat Engn, Kwangjoo, South Korea

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 09期

关键词：

D O I：

10.1063/1.1350620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Five stacks of InAs quantum dots (QDs) with InGaAsP barriers were grown on (100) InP and luminescence characteristics were analyzed. Cross-sectional transmission electron microscopy shows that small dots with a lateral size of similar to 30 nm and a height of similar to3 nm are formed with an areal density of similar to5 x 10(10) cm(-2). The QDs emit strong photoluminescence (PL) peaks in the range of 1.4-1.6 mum that can be controlled by nominal InAs thickness. The integrated PL intensity from QDs stays very high at room temperature as much as 20% of that at 10 K. At weak excitation, the carrier lifetimes are measured to be almost the same across the whole PL band at low temperature with a value of similar to4 ns and they remain at that value at room temperature. These characteristics strongly evidence that individual QDs are well isolated and have a strong carrier confinement at room temperature. (C) 2001 American Institute of Physics.

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页码：1171 / 1173

页数：3

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