Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy

被引：39

作者：

Li, HX ^{[1
]}

Wu, J ^{[1
]}

Xu, B ^{[1
]}

Liang, JB ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 17期

关键词：

D O I：

10.1063/1.121296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode. Preliminary characterizations have been performed using photoluminescence and transmission electron microscopy. The geometrical arrangement of the quantum dots is found to be strongly dependent on the amount of coverage. At low deposition thickness. InAs QDs are arranged in chains along [1(1) over bar0$] directions. Luminescence from the quantum dots and the wetting layer consisting of quantum wells with well widths of 1, 2, and 3 monolayers is observed. (C) 1998 American Institute of Physics.

引用

页码：2123 / 2125

页数：3

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