Small-signal modulation and differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers

被引:86
作者
Kamath, K [1 ]
Phillips, J [1 ]
Jiang, H [1 ]
Singh, J [1 ]
Bhattacharya, P [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECT LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.118754
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report small-signal modulation bandwidth and differential gain measurements of a single-layer self-organized In-0.4,Ga0.6As/GaAs quantum dot laser grown by molecular beam epitaxy. The 3 dB bandwidth of single-mode ridge waveguide lasers was measured to be 7.5 GHz at 100 mA under pulsed measurements, demonstrating the possibility of high speed operation of these devices. The differential gain was measured to be 1.7x10(14) cm(2). (C) 1997 American Institute of Physics.
引用
收藏
页码:2952 / 2953
页数:2
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