On the atomic structures, mobility and interactions of extended defects in GaN:: dislocations, tilt and twin boundaries

被引:115
作者
Bere, A.
Serra, A.
机构
[1] Univ Politecn Catalunya, Dept Matemat Aplicada 3, ES-08034 Barcelona, Spain
[2] Univ Ouagadougou, Lab Phys & Chim Environm, Ouagadougou 03, Burkina Faso
关键词
D O I
10.1080/14786430600640486
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results obtained by atomic computer simulation based on an adapted Stillinger - Weber ( SW) potential concerning the structure and relative stability of lattice dislocations, tilt and twin boundaries in GaN are discussed. The method used for the search and description of all possible atomic configurations depends on the crystallographic structure; consequently it is of general application and the results are transferable to the wurtzite binary compounds. On the contrary, the relaxed structures and their relative energetic stability are potential dependent. The results presented here correspond to a GaN model described by a pair potential. Whenever it has been possible our results have been compared with experiments or with ab initio calculations. We present the core shape and energy of (a) over right arrow and (c) over right arrow crystal dislocations of both edge and screw character; [ 0001] tilt boundaries of misorientation angles from 9.3 degrees ( corresponding to Sigma 37) to theta = 44.8 degrees ( corresponding to Sigma 43) and ( 10 (n) over bar) twin boundaries ( n = 1, 2, 3) [ 1, 2, 3, 4]. The atomic structures of the tilt boundaries can be described in terms of the three stable structures of the prism (a) over right arrow- edge dislocation core. The ( 10 (1) over bar3) twin boundary is entirely described by 6- coordinated channels whereas the other twin boundaries present more complex structural units.
引用
收藏
页码:2159 / 2192
页数:34
相关论文
共 47 条
[1]   An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN [J].
Aïchoune, N ;
Potin, V ;
Ruterana, P ;
Hairie, A ;
Nouet, G ;
Paumier, E .
COMPUTATIONAL MATERIALS SCIENCE, 2000, 17 (2-4) :380-383
[2]   The SINOx system for trucks to fulfill the future emission regulations [J].
Amon, B ;
Fischer, S ;
Hofmann, L ;
Zürbig, R .
TOPICS IN CATALYSIS, 2001, 16 (1-4) :187-191
[3]   Electronic structure of GaN stacking faults [J].
Bandic, ZZ ;
McGill, TC ;
Ikonic, Z .
PHYSICAL REVIEW B, 1997, 56 (07) :3564-3566
[4]   Atomic structures of twin boundaries in GaN -: art. no. 033305 [J].
Béré, A ;
Serra, A .
PHYSICAL REVIEW B, 2003, 68 (03)
[5]  
Béré A, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.085330
[6]   Atomic structure of dislocation cores in GaN -: art. no. 205323 [J].
Béré, A ;
Serra, A .
PHYSICAL REVIEW B, 2002, 65 (20) :1-10
[7]   Atomic structure of [0001] tilt boundaries in GaN [J].
Béré, A ;
Serra, A .
INTERFACE SCIENCE, 2001, 9 (3-4) :149-155
[8]   Modified Stillinger-Weber potential for planar defects modeling in GaN [J].
Béré, A ;
Vermaut, P ;
Hairie, A ;
Paumier, E ;
Ruterana, P ;
Nouet, G .
INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 :223-226
[9]   Structural units and low-energy configurations of [0001] tilt grain boundaries in GaN [J].
Chen, J ;
Ruterana, P ;
Nouet, G .
PHYSICAL REVIEW B, 2003, 67 (20)
[10]   Effects of buffer layer on formation of domain boundaries in epilayer during film growth of GaN by low-pressure metal-organic vapor phase epitaxy on sapphire substrates [J].
Cheng, LS ;
Zhang, Z ;
Zhang, GY ;
Yu, DP .
APPLIED PHYSICS LETTERS, 1997, 71 (25) :3694-3696